Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes
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DOI：
10.1016/j.jcrysgro.2003.11.028
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发表时间：
2004-01-19
影响因子：
1.8
通讯作者：
Wang, SC
中科院分区：
文献类型：
--
作者：
Lin, CF;Yao, HH;Wang, SC
采用MOCVD方法生长了谐振腔发光二极管（RC-LED）结构。RC-LED的结构由顶部TiO 2/SiO2 DBR（81.7%，反射率）和底部AlN/GaN DBR（90.4%）堆叠之间的3 λ InGaN/GaN MQW LED腔组成。通过改变注入电流密度，测得稳定的410 nm发射峰和较低的热致红移效应（0.12 nm/kA/cm（2））。在600 A/cm（2）注入电流密度下，全RC-LED器件的光输出功率比没有顶部TiO 2/SiO2 DBR层的RC-LED高三倍。在这种垂直腔结构中，由于共振效应，产生了7.4nm的窄线宽、410 nm的发射峰和3倍的高输出功率。(C)2003年由Elsevier B. V.出版
The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3lambda InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410 nm emission peak and a low thermally induced red-shift effect (0.12 nm/kA/cm(2)) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO2/SiO2 DBR layers under 600 A/cm(2) inject current density. The narrow line width of 7.4 nm, emission peak localization at 410 nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure. (C) 2003 Published by Elsevier B.V.