Erratum: “Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films” [AIP Advances 6, 075019 (2016)]
Erratum: “Stabilization of orthorhombic phase in single-crystal ZnSnN 2 films” [AIP Advances 6, 075019 (2016)]
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勘误表：“单晶 ZnSnN 2 薄膜中斜方相的稳定性”[AIP Advances 6, 075019 (2016)]
DOI：
10.1063/1.5082196
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发表时间：
2018
期刊：
影响因子：
1.6
通讯作者：
Durbin, Steven M.
中科院分区：
文献类型：
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作者：
Senabulya, Nancy;Feldberg, Nathaniel;Makin, Robert. A.;Yang, Yongsoo;Shi, Guangsha;Jones, Christina M.;Kioupakis, Emmanouil;Mathis, James;Clarke, Roy;Durbin, Steven M.
报道了用等离子体辅助气相沉积技术在(111)Y稳定的氧化锆(YSZ)和(001)没食子酸锂(LiGaO_2)衬底上外延生长的ZnSnN_2薄膜的晶体结构。对生长在LiGaO_2衬底上的ZnSnN_2薄膜进行了X射线衍射测量，结果表明薄膜为Pn21a对称[33空间群]的单晶纯正交晶系结构，晶胞参数与理论预测值吻合较好。这种Pn21a对称性是由LiGaO2衬底施加在ZnSnN_2薄膜上的，LiGaO_2衬底也具有正交对称性。在高衬底温度~550℃和低氮流量~10~(-5)Torr的条件下，在YSZ衬底上生长的ZnSnN_2薄膜中观察到了从纤锌矿相到正交相的结构变化，其特征是基面晶格收缩和面外晶格参数膨胀5.7%。异价三元化合物(HTCs)为通过改变晶格结构来调整其电学性质提供了独特的机会。具体地说，在某些高温超导材料中，可以通过在阳离子亚晶格中引入无序来控制材料的带隙。无序诱导带隙调谐首次在GaInP2薄膜中被报道，在生长过程中Sb的引入导致离子在Ga-In亚晶格中的随机放置，导致直接带隙增加高达0.135 eV[1]。最近，对ZnSnP2能带结构的理论计算预测，完全无序的锌锡亚晶格的禁带宽度降低了0.95 eV[2]。然而，在实验上，到目前为止，阳离子亚晶格的无序只实现了与
We report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures~ 550 C and low values of nitrogen flux~ 10-5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the outof-plane lattice parameter.Heterovalent ternary compounds (HTCs) offer a unique opportunity to tune their electrical properties through structural changes of the crystal lattice. Specifically, in some HTCs, the band gap of the material can be controlled by introducing disorder into the cation sublattice. Disorder-induced band-gap tuning was experimentally first reported in GaInP2 films where introduction of Sb during growth led to the random placement of cations in the Ga-In sublattice, leading to an increase of up to 0.135 eV in the direct band gap [1]. Recently, theoretical calculations of the ZnSnP2 band structure predicted a 0.95 eV reduction of the band gap with a fully disordered Zn-Sn sublattice [2]. Experimentally, however, disordering of the cation sublattice has so far only achieved a 0.3 eV reduction in the band gap with the