Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer
Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer
复制标题
硅片介电泳抛光（DEPP）的正交实验研究
DOI：
10.3390/mi11060544
复制
发表时间：
2020-06-01
期刊：
影响因子：
3.4
通讯作者：
Yuan, Julong
中科院分区：
文献类型：
--
作者：
Zhao, Tianchen;Deng, Qianfa;Yuan, Julong
高表面质量的硅片作为基片材料在微机械、微电子等领域有着广泛的应用，迫切需要一种高效、高质量的抛光方法来满足其巨大的需求。提出了一种介电电泳抛光（DEPP）方法，通过在抛光区域施加非均匀电场来减缓离心力的甩出效应，从而实现硅片的高效、高质量抛光。阐述了DEPP的原理。对重要的抛光工艺参数进行了正交试验。进行了硅片的对比抛光实验。正交试验结果表明，电场强度和转速对材料去除率和表面粗糙度的影响比均大于80%。最佳工艺参数组合为：电场强度450 V/mm，转速90 rpm，磨料浓度30 wt%，磨料粒径80 nm。对比抛光实验表明，DEPP的MRR和材料去除均匀性明显优于传统的化学机械抛光（CMP）。与传统CMP相比，DEPP的MRR提高了17.6%，最终硅片表面粗糙度达到Ra 0.31 nm。DEPP可以实现硅片的高效率和高质量加工。
Silicon wafer with high surface quality is widely used as substrate materials in the fields of micromachines and microelectronics, so a high-efficiency and high-quality polishing method is urgently needed to meet its large demand. In this paper, a dielectrophoresis polishing (DEPP) method was proposed, which applied a non-uniform electric field to the polishing area to slow down the throw-out effect of centrifugal force, thereby achieving high-efficiency and high-quality polishing of silicon wafers. The principle of DEPP was described. Orthogonal experiments on important polishing process parameters were carried out. Contrast polishing experiments of silicon wafer were conducted. The orthogonal experimental results showed that the influence ratio of electric field intensity and rotation speed on material removal rate (MRR) and surface roughness was more than 80%. The optimal combination of process parameters was electric field intensity 450 V/mm, rotation speed 90 rpm, abrasive concentration 30 wt%, size of abrasive particle 80 nm. Contrast polishing experiments indicated that the MRR and material removal uniformity of DEPP were significantly better than traditional chemical mechanical polishing (CMP). Compared with the traditional CMP, the MRR of DEPP was increased by 17.6%, and the final surface roughness of silicon wafer reached Ra 0.31 nm. DEPP can achieve high-efficiency and high-quality processing of silicon wafer.