Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy
Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy
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DOI：
10.1002/adfm.202008967
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发表时间：
2021-01-12
影响因子：
19
通讯作者：
Patane, Amalia
中科院分区：
文献类型：
--
作者：
Buckley, David;Kudrynskyi, Zakhar R.;Patane, Amalia
材料的导热能力影响许多物理现象，从纳米级器件的热管理到热电。货车范德瓦尔斯二维材料提供了一个通用的平台，以定制热传递，由于其高表面积与体积比和机械灵活性。在这里，二维硒化铟（InSe）的纳米热性能的扫描热显微镜研究。2D InSe的高电导率、宽带光吸收和机械柔性伴随着异常的低热导率（kappa）。这可以小于诸如氧化硅的低kappa晶体的尺寸，并且其随着减小InSe的横向尺寸和/或厚度而减小。的热响应探测在独立的InSe层，以及由衬底支持的层，揭示了界面热阻，声子散射和应变的作用。这些热特性对于未来的新兴技术至关重要，例如需要使用低kappa、高电子迁移率2D材料（例如InSe）进行有效散热或热电能量转换的场效应晶体管。
The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals 2D materials offer a versatile platform to tailor heat transfer due to their high surface-to-volume ratio and mechanical flexibility. Here, the nanoscale thermal properties of 2D indium selenide (InSe) are studied by scanning thermal microscopy. The high electrical conductivity, broad-band optical absorption, and mechanical flexibility of 2D InSe are accompanied by an anomalous low thermal conductivity (kappa). This can be smaller than that of low-kappa dielectrics, such as silicon oxide, and it decreases with reducing the lateral size and/or thickness of InSe. The thermal response is probed in free-standing InSe layers as well as layers supported by a substrate, revealing the role of interfacial thermal resistance, phonon scattering, and strain. These thermal properties are critical for future emerging technologies, such as field-effect transistors that require efficient heat dissipation or thermoelectric energy conversion with low-kappa, high electron mobility 2D materials, such as InSe.