UV radiation resistance and solar blindness of CsI and KBr photocathodes
UV radiation resistance and solar blindness of CsI and KBr photocathodes
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CsI 和 KBr 光电阴极的抗紫外线辐射能力和日盲性
DOI：
10.1109/nssmic.2000.949272
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
O. Siegmund
中科院分区：
文献类型：
--
作者：
A. Tremsin;O. Siegmund
本文详细研究了碘化铯和溴化钾光电阴极在紫外光照射下的稳定性。对于相同的累积剂量和照明波长，在较低的照明强度下，发现UV量子效率的降低更明显。对于相同数量的提取的光电子带内UV曝光导致更大的灵敏度衰减相比，带外照明。辐射入射角对紫外灵敏度的降低并不重要，而可见光抑制率的变化（即日盲的降低）确实取决于入射角：在垂直入射下照射的光电阴极比在掠射角下照射的光电阴极激活得快得多。我们发现，可见光灵敏度的增加可以用总累积剂量来表征，并且与紫外激活过程中的辐照通量无关。我们还观察到，热退火大大提高了CsI光电阴极的可见光抑制。
A detailed study of the stability of CsI and KBr photocathodes under UV irradiation is presented. UV quantum efficiency degradation was found to be more pronounced at lower illumination intensity for the same accumulated dose and illumination wavelength. For an equal number of extracted photoelectrons in-band UV exposure led to a larger sensitivity decay as compared to out-of-band illumination. The angle of radiation incidence was not important for the UV sensitivity degradation, while changes of visible light rejection (i.e. degradation of solar blindness) did depend on the incidence angle: the photocathodes illuminated at normal incidence were activated much faster than the films irradiated at grazing angle. We found that the increase of visible sensitivity can be characterized by the total accumulated dose and is independent of irradiation flux during UV activation. We also observed that heat annealing substantially improves the visible light rejection of CsI photocathodes.