Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy
Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy
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DOI：
10.1007/s10909-016-1484-1
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发表时间：
2016-07-01
影响因子：
2
通讯作者：
Kochi, C.
中科院分区：
文献类型：
--
作者：
Hanaoka, M.;Kaneda, H.;Kochi, C.
我们报告的远红外（FIR）天文学的新探测器的发展现状。我们开发阻塞杂质带（BIB）型锗探测器，以实现大格式的紧凑阵列，覆盖宽FIR波长范围高达200米。我们采用室温表面活化晶片键合（SAB）方法制备了具有不同物理参数的BIB-type结构Ge结器件。我们测量的绝对响应率和光谱响应曲线的每个设备在低温下，使用一个内部的黑体源在低温恒温器和傅里叶变换光谱仪，分别。结果表明，SAB Ge结器件比常规体Ge：Ga器件具有更高的绝对响应率和更长的光谱响应截止波长。在此基础上，我们讨论了用于FIR探测器的SAB Ge结器件的最佳参数。我们得出结论，SAB锗结器件具有良好的适用性，下一代FIR探测器覆盖波长高达200米，具有高响应度。作为下一步，我们计划制造一个BIB-type Ge阵列器件结合低功耗低温读出集成电路。
We report the current status of the development of our new detectors for far-infrared (FIR) astronomy. We develop Blocked-Impurity-Band (BIB)-type Ge detectors to realize large-format compact arrays covering a wide FIR wavelength range up to 200 m. We fabricated Ge junction devices of different physical parameters with a BIB-type structure, using the room temperature, surface-activated wafer bonding (SAB) method. We measured the absolute responsivity and the spectral response curve of each device at low temperatures, using an internal blackbody source in a cryostat and a Fourier transform spectrometer, respectively. The results show that the SAB Ge junction devices have significantly higher absolute responsivities and longer cut-off wavelengths of the spectral response than the conventional bulk Ge:Ga device. Based upon the results, we discuss the optimum parameters of SAB Ge junction devices for FIR detectors. We conclude that SAB Ge junction devices possess a promising applicability to next-generation FIR detectors covering wavelengths up to 200 m with high responsivity. As a next step, we plan to fabricate a BIB-type Ge array device in combination with a low-power cryogenic readout integrated circuit.