Optical Characteristic of the Strain‐Controlled GaN Epitaxial Layer Grown on 6H‐SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer
Optical Characteristic of the Strain‐Controlled GaN Epitaxial Layer Grown on 6H‐SiC Substrate by an Adapting (GaN/AlN) Multibuffer Layer
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DOI：
10.1002/1521-396x(200207)192:1
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发表时间：
2002-07
期刊：
影响因子：
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通讯作者：
M. Horie;Yoshiyuki Ishihara;J. Yamamoto;M. Kurimoto;T. Takano;H. Kawanishi
中科院分区：
文献类型：
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作者：
M. Horie;Yoshiyuki Ishihara;J. Yamamoto;M. Kurimoto;T. Takano;H. Kawanishi
在（0001）6 H-SiC衬底上采用金属有机物气相外延法生长了GaN外延层。通过改变（GaN/AlN）多层缓冲层的层结构，成功地控制了外延层中的残余应变。薄GaN外延层（薄至0.1 μm）的晶格常数c接近于自支撑GaN的晶格常数c，其中薄GaN层通过适配多缓冲层生长在衬底上。此外，（GaN/AlN）多重缓冲层不仅对于控制GaN外延层中所包括的残余应变有效，而且对于改善GaN外延层的质量也有效。
GaN epitaxial layers were grown on a (0001) 6H-SiC substrate by metalorganic vapor phase epitaxy by adapting a (GaN/AlN) multibuffer layer. Successful control of residual strain in the epitaxial layers was achieved by changing the layer structure of the (GaN/AlN) multibuffer layer. The lattice constant c of the thin GaN epitaxial layer (as thin as 0.1 μm) was close to that of freestanding GaN, where the thin GaN layer was grown on the substrate by adapting the multibuffer layer. In addition, the (GaN/AIN) multibuffer layer is effective not only for control of the residual strain included in a GaN epitaxial layer, but also for improving the quality of a GaN epitaxial layer.