A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric
A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric
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DOI：
10.1088/1674-4926/37/2/024004
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发表时间：
2016
影响因子：
5.1
通讯作者：
C. Liu 刘;J. Xu 徐;L. Liu 刘;H. Lu 卢;Y. Huang 黄
中科院分区：
文献类型：
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作者：
C. Liu 刘;J. Xu 徐;L. Liu 刘;H. Lu 卢;Y. Huang 黄
通过求解沟道内二维泊松方程并考虑短沟道效应、DIBL效应和量子效应，建立了堆叠式高k栅介质GaAs MOSFET的阈值电压模型。仿真结果与Silvaco TCAD数据吻合较好，证实了模型的正确性和有效性。利用该模型，研究了堆叠高k栅极电介质的结构和物理参数对阈值电压漂移和阈值电压的温度特性的影响。结果表明，堆叠栅介质结构可以有效抑制边缘场和DIBL效应，改善阈值和温度特性，但另一方面，如果忽略量子效应，则会高估温度对阈值电压的影响。
A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.