Stable polythiophene semiconductors incorporating thieno[2,3-b]thiophene
Stable polythiophene semiconductors incorporating thieno[2,3-b]thiophene
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DOI：
10.1021/ja043112p
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发表时间：
2005-02-02
影响因子：
15
通讯作者：
McCulloch, I
中科院分区：
文献类型：
--
作者：
Heeney, M;Bailey, C;McCulloch, I
这项工作描述了一种新的设计方法，可以制备具有高载流子迁移率的空气稳定的半导体噻吩聚合物。将噻吩并[2,3-b]噻吩掺入聚噻吩主链中引入了不利于完全离域的交叉共轭双键，与完全共轭聚噻吩相比，导致高电离势，且载流子迁移率没有降低。在空气中测量时，所得可溶液加工的聚合物表现出高达 0.15 cm2/V s 的载流子迁移率和大于 105 的开/关比。晶体管在空气中的寿命可达数月，无需封装。
This work describes a new design methodology that allows the preparation of air stable, semiconducting thiophene polymers with high charge carrier mobilities. The incorporation of thieno[2,3-b]thiophene into a polythiophene backbone introduces cross-conjugated double bonds that disfavor full delocalization, leading to high ionization potential in comparison to a fully conjugated polythiophene, with no reduction in charge carrier mobility. The resulting solution processable polymers exhibit charge carrier mobilities up to 0.15 cm2/V s and on/off ratios greater than 105when measured in air. Transistors exhibit lifetimes of several months in air with no encapsulation necessary.