Unique optical properties of AlGaN alloys and related ultraviolet emitters
Unique optical properties of AlGaN alloys and related ultraviolet emitters
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DOI：
10.1063/1.1765208
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发表时间：
2004-06-21
影响因子：
4
通讯作者：
Jiang, HX
中科院分区：
文献类型：
--
作者：
Nam, KB;Li, J;Jiang, HX
已经采用了深紫外光发光光谱来研究Alxga1-XN合金的光学特性（0比无或无毒剂比或等于1）。发现随着e骨的偏振的发射强度，并发现极化程度随着x的增加而降低。这是由于GAN（ALN）中的主要带缘发射与e骨TOC（eParallalel TOC）极化的结果。我们的实验结果表明，ALXGA1-XN合金和相关UV发射器的发射效率降低也可能与它们独特的极化特性有关，即，光发射的强度随X降低而随着X的极化而降低。因此得出的结论是，具有Algan合金作为活性层的紫外线发射剂与Ingan和其他半导体发射器具有截然不同的特性。 （c）2004物理研究所。
Deep UV photoluminescence spectroscopy has been employed to study the optical properties of AlxGa1-xN alloys (0less than or equal toxless than or equal to1). The emission intensity with polarization of Eperpendicular toc and the degree of polarization were found to decrease with increasing x. This is a consequence of the fact that the dominant band edge emission in GaN (AlN) is with polarization of Eperpendicular toc(Eparallel toc). Our experimental results suggest that the decreased emission efficiency in AlxGa1-xN alloys and related UV emitters could also be related with their unique polarization property, i.e., the intensity of light emission with polarization of Eperpendicular toc decreases with x. It is thus concluded that UV emitters with AlGaN alloys as active layers have very different properties from InGaN and other semiconductor emitters. (C) 2004 Institute of Physics.