Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.
复制标题
c 面 InGaN/GaN 量子阱结构中载流子局域化的共振光致发光研究。
DOI：
10.1088/1361-648x/aab818
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Blenkhorn WE
中科院分区：
文献类型：
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作者：
Blenkhorn WE
在本文中，我们报告的InGaN/GaN量子阱结构的低温（12 K）光致发光光谱的形式作为激发光子能量的函数的变化。由于光子能量逐渐减少，我们观察到在一个临界能量的光谱形式的变化，从一个是由占据的完整分布的孔定位中心，这是由特定的本地化网站的共振激发。这种变化是由一个有效的迁移率边缘，从而光激发的空穴保持本地化在其初始能量，并防止散射到其他本地化网站。原子紧束缚计算的结果证实了这一分配，该结果表明，波函数重叠的最低躺的局域化的孔与其他空穴状态是低的高躺的空穴状态与其他高躺的空穴状态的重叠相比。
In this paper we report on changes in the form of the low temperature (12 K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisation sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.