Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy
复制标题
通过金属有机气相外延在硅 (111) 上生长的绿色 InGaN 发光二极管
DOI：
--
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
P. Gibart
中科院分区：
文献类型：
--
作者：
E. Feltin;S. Dalmasso;P. de Mierry;B. Beaumont;H. Lahrèche;Agnès Bouillé;H. Haas;M. Leroux;P. Gibart
我们报道了利用金属有机气相外延在Si（111）衬底上生长的绿色InGaN发光二极管（led）的生长和特性。采用了单InGaN量子阱有源层。讨论了氮化镓在Si（111）上的光学性质和氮化镓的p掺杂效率。LED的导通电压为6.8 V， 20ma时工作电压为10.7 V。led的电致发光开始于3.5 V的正向偏置。电致发光峰位于508 nm处，半峰全宽为52 nm。在施加电流为20 mA的情况下，实现了6µW （~ 8π/5 sr）的光输出功率。
We report on the growth and characterization of green InGaN light-emitting diodes (LEDs) grown on Si (111) substrates using metalorganic vapor phase epitaxy. A single InGaN quantum well active layer has been used. The optical qualities of InGaN on Si(111) and the p–doping efficiency of GaN are discussed. The turn-on voltage of the LED is 6.8 V and the operating voltage is 10.7 V at 20 mA. Electroluminescence of the LEDs starts at a forward bias of 3.5 V. The electroluminescence peaks at 508 nm, with a full-width at half maximum of 52 nm. An optical output power of 6 µW (in ∼ 8π/5 sr) was achieved for an applied current of 20 mA.