GaAs TUNNETT Diodes
GaAs TUNNETT Diodes
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砷化镓 TUNNETT 二极管
DOI：
10.1109/tmtt.1978.1129540
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发表时间：
1978
影响因子：
4.3
通讯作者：
Y. Okuno
中科院分区：
文献类型：
--
作者：
J. Nishizawa;K. Motoya;Y. Okuno
隧道注入渡越时间（TUNNETT）二极管工作在高频，与雪崩二极管相比具有低噪声水平。隧道注入在一个薄的载流子产生区的隧道强烈地依赖于电场强度超过1000 kV/cm的载流子的电离可以忽略不计，从而导致更高的效率性能比IMPATT。用一种新的LPE方法（控制蒸气压温差法）制备了p ~+-n和p ~+-n-n ~+结构的GaAs隧道结二极管。从脉冲驱动的p ~+-n-n ~+二极管中获得了频率从100到248 GHz的基波振荡。本文详细介绍了砷化镓隧道二极管的振荡特性。
The tunnel-injection-transit-time (TUNNETT) diode is operated at a high frequency and has a low-noise level compared to the IMPATT diode. The tunnel injection in a thin carrier generating region of the TUNNETT depends strongly on the electric-field intensity over 1000 kV/cm where the ionization of carriers can be neglected, leading to a higher efficiency performance than that of the IMPATT. GaAs TUNNETT diodes with p+-n and p+-n-n+ structures have been fabricated by a new LPE method (the temperature-difference method under controlled vapor pressure). The fundamental oscillation at frequencies from about 100 up to 248 GHz has been obtained from the pulse-driven p+-n-n+ diodes. This paper describes the details of the oscillation characteristics of GaAs TUNNETT diodes.