Gate-Tunable Electron Transport Phenomena in Al-Ge⟨111⟩-Al Nanowire Heterostructures.
Gate-Tunable Electron Transport Phenomena in Al-Ge⟨111⟩-Al Nanowire Heterostructures.
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DOI：
10.1021/acs.nanolett.5b03169
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发表时间：
2015-11-11
期刊：
影响因子：
10.8
通讯作者：
Lugstein A
中科院分区：
文献类型：
--
作者：
Brunbauer FM;Bertagnolli E;Lugstein A
在背门场效应晶体管（fet）中集成的单片金属-半导体-金属（Al-Ge-Al）纳米线（NW）异质结构中证明了静电可调谐的负差分电阻（NDR）。即使在室温下，NDR的明确特征也归因于谷间电子转移。在更高的电场中，撞击电离导致⟨111⟩取向的Ge NW段中的电流呈指数增长。通过静电门控、几何约束和异质结形状对热电子转移的综合影响，以及通过改变NW场效应管中的载流子浓度而改变的电子-电子散射率，可以实现传输速率的调制，表现为峰谷比（PVR）的大可调性和冲击电离的开始。
Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal–semiconductor–metal (Al–Ge–Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are attributed to intervalley electron transfer. At yet higher electric fields, impact ionization leads to an exponential increase of the current in the ⟨111⟩ oriented Ge NW segments. Modulation of the transfer rates, manifested as a large tunability of the peak-to-valley ratio (PVR) and the onset of impact ionization is achieved by the combined influences of electrostatic gating, geometric confinement, and heterojunction shape on hot electron transfer and by electron–electron scattering rates that can be altered by varying the charge carrier concentration in the NW FETs.