Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.
Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.
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DOI：
10.1364/ao.44.004429
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发表时间：
2005-07
期刊：
影响因子：
1.9
通讯作者：
Shunquan Wang;Changhe Zhou;H. Ru;Yanyan Zhang
中科院分区：
文献类型：
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作者：
Shunquan Wang;Changhe Zhou;H. Ru;Yanyan Zhang
聚合物沉积是与使用感应耦合等离子体 (ICP) 技术蚀刻熔融石英相关的严重问题，并且通常会阻止进一步蚀刻。我们报告了一种优化的蚀刻条件，在该条件下，使用 ICP 技术蚀刻熔融石英时不会发生聚合物沉积。在优化的刻蚀条件下，制备的熔融石英光栅表面光滑、洁净。熔融石英的蚀刻速率相对较高，并且蚀刻深度与工作时间之间呈线性关系。在优化的刻蚀条件下制作的光栅的衍射结果与理论结果很好地吻合。
Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.