Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters
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DOI：
10.1587/elex.2.97
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
T. Funaki;J. Balda;J. Junghans;A. Jangwanitlert;S. Mounce;F. Barlow;H. Mantooth;T. Kimoto;T. Hikihara
中科院分区：
文献类型：
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作者：
T. Funaki;J. Balda;J. Junghans;A. Jangwanitlert;S. Mounce;F. Barlow;H. Mantooth;T. Kimoto;T. Hikihara
本文报告了在极高环境温度下在 DC-DC 降压转换器中运行的 SiC 器件。为此，作者将 SiC JFET 和肖特基二极管封装在热稳定封装中，并构建了一个高温电感器。该转换器在高达 400°C 的环境温度下进行了测试。尽管 SiC JFET 的传导损耗随着温度的升高而略有增加，但 SiC JFET 和肖特基二极管仍能继续正常工作，因为它们的开关特性随温度变化很小。这项工作进一步证明了 SiC 器件对于高温功率转换器应用的适用性。
This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400°C. Although the conduction loss of the SiC JFET increases slightly with increasing temperatures, the SiC JFET and Schottky diode continue normal operation because their switching characteristics show minimal change with temperature. This work further demonstrates the suitability of the SiC devices for high-temperature power converter applications.