Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO
Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO
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DOI：
10.1063/1.3262965
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发表时间：
2009-11
影响因子：
4
通讯作者：
K. Tang;S. Gu;Shunming Zhu;Jiagao Liu;Hui Chen;Jiandong Ye;Rong Zhang;Youdou Zheng
中科院分区：
文献类型：
--
作者：
K. Tang;S. Gu;Shunming Zhu;Jiagao Liu;Hui Chen;Jiandong Ye;Rong Zhang;Youdou Zheng
本文对金属有机化学气相沉积法生长的n掺杂ZnO中氮碳相关复合缺陷的补偿抑制机制进行了全面的研究。低N/O比抑制了类供体取代复合物缺陷（NN）O和（NC）O的化学键信息，导致导电型转化。高外延温度对理想受体NO形成的抑制作用大于（NC）O的抑制作用，这可以从空穴浓度的降低中看出。利用这种抑制效应，本研究为实现p型ZnO提供了一条有前途的途径。
In this letter, the authors performed a comprehensive study on suppression mechanism of compensation from nitrogen and carbon related complex defects in N-doped ZnO grown by metal-organic chemical vapor deposition. The chemical bonding information of donorlike substitutional complex defects, (NN)O and (NC)O, were restrained with low N/O ratio, leading to the conduction type conversion. High epitaxial temperature has more suppressing effect on the formation of desired acceptor NO than that of (NC)O, as evident by the decreasing hole concentration. Upon utilization of such suppression effect, this study provides a promising route to realize p-type ZnO.