Parity effect and charge-binding transition in submicron Josephson junction arrays
Parity effect and charge-binding transition in submicron Josephson junction arrays
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亚微米约瑟夫森结阵列中的奇偶效应和电荷结合转变
DOI：
10.1134/1.567397
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
A. Pugachev
中科院分区：
文献类型：
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作者：
M. Feigel'man;S. Korshunov;A. Pugachev
我们重新考虑库仑主导的约瑟夫森结阵列中的 Berezinski $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ -Kosterlitz-Thouless (BKT) 过渡到绝缘状态。我们表明，先前预测的库珀对 BKT 转变在 T=T2 时的图像仅在 T2 远低于奇偶效应温度 T*≈0.1Δ 的情况下才有效，并且即使在这种情况下，它也不是严格的相变而只是交叉，而真正的相变发生在 T1=T2/4 处。我们的理论与库仑主导的约瑟夫森阵列的现有实验数据一致，并且还揭示了具有接近临界比率 EC/EJ 的阵列中电阻率的不寻常折返温度依赖性的起源。
We reconsider the Berezinski $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ -Kosterlitz-Thouless (BKT) transition to an insulating state in Coulomb-dominated Josephson junction arrays. We show that the previously predicted picture of the Cooper-pair BKT transition atT=T2is valid only under the condition thatT2is considerably below the parity-effect temperatureT*≈0.1Δ, and that even in that case it is not a rigorous phase transition but only a crossover, whereas the real phase transition takes place atT1=T2/4. Our theory is in agreement with available experimental data on Coulomb-dominated Josephson arrays and also sheds some light on the origin of the unusual reentrant temperature dependence of the resistivity in an array with a nearly critical ratioEC/EJ.