Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced Technique
Layout Dependence Modeling for 45-nm CMOS With Stress-Enhanced Technique
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DOI：
10.1109/ted.2009.2026121
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发表时间：
2009-08
影响因子：
3.1
通讯作者：
E. Morifuji;H. Aikawa;H. Yoshimura;A. Sakata;M. Ohta;M. Iwai;F. Matsuoka
中科院分区：
文献类型：
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作者：
E. Morifuji;H. Aikawa;H. Yoshimura;A. Sakata;M. Ohta;M. Iwai;F. Matsuoka
应力增强型MOSFET的版图依赖关系，包括接触定位、第二邻近多晶硅效应和弯曲扩散，采用45 nm CMOS逻辑技术建模。结果表明，应力衬层厚度较大的PMOS对沟道方向接触位置的敏感度大于NMOS。触点位置的影响通过使用触点到栅极的距离(X)和触点数量(N)来建模。在栅距效应方面，得出的结论是，除了相邻的栅外，第二个相邻的栅会影响沟道应力。分析了弯曲扩散对NMOS和PMOS的影响。对于NMOS，通道轮廓受弯曲形状的影响。这可以用Vth的变化来描述。对于PMOS，沟道应力受弯曲扩散的调制。用三个几何参数模拟了PMOS弯曲扩散过程中的应力效应。紧凑模型被应用于实际的45 nm单元库的表征。结果表明，利用所建立的模型和设计流程，45 nm角库中的饱和电流(IDSAT)变化在-12%-14%之间。
Layout dependences for stress-enhanced MOSFETs including contact positioning, the second neighboring poly effect, and bent diffusion are modeled in 45-nm CMOS logic technology. It is found that the sensitivity of contact position in the channel direction is larger for PMOS with a higher stress liner than for NMOS. The effect of contact positions is modeled by using the distance of contact to gate (x) and the number of contacts (N). In terms of the gate-space effect, it is concluded that, in addition to the neighboring gates, second neighboring gates affect the channel stress. The effect of bent-shape diffusion is analyzed for NMOS and PMOS. For NMOS, the channel profile is affected by the bent shape. This can be described by the change of V th. For PMOS, the channel stress is modulated by the bent diffusion. The stress effect in bent-shape diffusion for PMOS is modeled with three geometrical parameters. The compact model is applied to the characterization of actual 45-nm cell libraries. It is confirmed that, with the constructed models and design flow, a saturation current (I dsat) change of -12%-14% is removed from the uncertain margin in 45-nm corner libraries.