Nonlinearity and recovery time of 1.55 /spl mu/m intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
Nonlinearity and recovery time of 1.55 /spl mu/m intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells
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InGaAs-AlAs-AlAsSb 耦合量子阱中 1.55 /spl mu/m 子带间吸收的非线性和恢复时间
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
O. Wada
中科院分区：
文献类型：
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作者：
T. Akiyama;N. Georgiev;T. Mozume;H. Yoshida;A. Gopal;O. Wada
通过使用InGaAs/AlAs/AlAsSb耦合量子阱，首次通过实验获得了1.5 /spl mu/m子带间吸收的非线性和恢复时间值。三阶磁化率(/spl chi//sup (3)/)经评估为5.8/spl times/10/sup -17/m/sup 2//V/sup 2/。在保持品质因数 (/spl chi//sup (3)///spl alpha//spl tau/) 与带间跃迁一样大的同时，获得了 /spl sim/685 fs 的超快恢复时间 (/spl tau/)。
Values for the nonlinearity and recovery time of 1.5 /spl mu/m intersubband absorption have been experimentally obtained for the first time by using InGaAs/AlAs/AlAsSb coupled quantum wells. The third-order susceptibility (/spl chi//sup (3)/) has been evaluated to be 5.8/spl times/10/sup -17/m/sup 2//V/sup 2/. An ultrafast recovery time (/spl tau/) of /spl sim/685 fs has been obtained while keeping the figure of merit (/spl chi//sup (3)///spl alpha//spl tau/) as large as those of interband transitions.