Silicon nitride polarizing beam splitter with potential application for intersubband-transition-based all-optical gate device
Silicon nitride polarizing beam splitter with potential application for intersubband-transition-based all-optical gate device
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DOI：
10.7567/jjap.54.04dg08
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发表时间：
2015-04-01
影响因子：
1.5
通讯作者：
Akimoto, Ryoichi
中科院分区：
文献类型：
--
作者：
Feng, Jijun;Akimoto, Ryoichi
在本文中，我们提出了一种氮化硅偏振分束器的设计，制造和表征，这在基于子带间跃迁诱导交叉相位调制的全光门器件中具有潜在的应用。该分束器采用两个定向耦合器结构组成的马赫-曾德尔干涉仪（MZI）结构，可实现高消光比、宽工作带宽和可忽略的固有多余损耗。根据耦合模理论和超模理论设计了一种定向耦合器，它可以实现横向电磁（TM）波的完全交叉耦合和横向电光（TE）光的3dB耦合。因此，在MZI配置下，TE光可以耦合到交叉端口，而TM波从直通端口输出。在约1554 nm波长处可以实现37 dB的消光比，在38 nm带宽处可以实现消光比高于20 dB。该器件在光通信中的应用前景将远远超出偏振分光的范畴。(C)2015日本应用物理学会
In this paper, we present the design, fabrication, and characterization of a silicon nitride polarizing beam splitter, which has potential applications in an all-optical gate device based on an intersubband-transition-induced cross-phase modulation. On the basis of a Mach-Zehnder interferometer (MZI) configuration consisting of two directional coupler structures, the splitter can realize a high extinction ratio, wide operation bandwidth, and negligible inherent excess loss. The directional coupler is designed on the basis of the coupled mode theory and supermode theory, which can work as a 3-dB coupler for transverse electrical (TE) light and realize a complete cross-coupling for a transverse magnetic (TM) wave. Thus, the TE light can couple to the cross port while the TM wave is output from the through port under the MZI configuration. An extinction ratio of 37 dB at approximately 1554nm wavelength and a 38 nm bandwidth with an extinction ratio of higher than 20 dB can be achieved. More application prospects beyond the polarization splitting in optical communications could be expected for the current device. (C) 2015 The Japan Society of Applied Physics