Relation between electroluminescence and photoluminescence of Si+-implanted SiO2
Relation between electroluminescence and photoluminescence of Si+-implanted SiO2
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DOI：
10.1063/1.365712
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发表时间：
1997-10
影响因子：
3.2
通讯作者：
Haizhi Song;X. Bao;Ning-Sheng Li;J. R. Zhang
中科院分区：
文献类型：
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作者：
Haizhi Song;X. Bao;Ning-Sheng Li;J. R. Zhang
对热氧化法制备的Si+注入SiO2薄膜的电致发光（EL）和光致发光（PL）性能进行了比较。EL和PL光谱均表明，该发光来自470、600和730 nm左右的三个发光带。在低于1000℃和高于1000℃的温度下退火，使得470 nm和730 nm波段分别在PL光谱中占主导地位。在PL中较弱的600 nm波段通常是EL中最强的。不同发光带对EL的相对贡献取决于退火过程，但与电流密度无关。470nm、600nm和730nm发光带激发机制的不同导致了EL和PL的差异。
The electroluminescence (EL) from Si+ implanted SiO2 thin film prepared by thermal oxidation was compared with photoluminescence (PL) properties. Both EL and PL spectra indicate that the luminescence originate from the same three luminescence bands around 470, 600, and 730 nm. Annealing at temperatures below and above 1000 °C makes the 470 and the 730 nm bands dominate in PL spectra, respectively. The 600 nm band, which is weaker in PL, is usually the strongest in EL. The relative contributions from different luminescence bands to EL depend on annealing, but are independent of current density. The different excitation mechanisms of the 470, 600, and 730 nm luminescence bands give rise to the discrepancy between EL and PL.