Electrical Conductivity of Organic Semiconductors at High Pressure
Electrical Conductivity of Organic Semiconductors at High Pressure
复制标题
有机半导体在高压下的电导率
DOI：
10.1246/bcsj.37.1378
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发表时间：
1964
影响因子：
4
通讯作者：
H. Inokuchi
中科院分区：
文献类型：
--
作者：
Y. Harada;Y. Maruyama;I. Shirotani;H. Inokuchi
为了研究高压对有机半导体电导率的影响，采用紧束缚近似处理，计算了蒽晶体在常压和160毫巴下的能带结构。电子和空穴在160毫巴时的总带宽是大气压时的5·6倍。虽然总的来说，两种载流子的迁移率在160毫巴时增加了几十倍，但高压下电阻率的急剧下降可能主要是由于电荷载流子浓度的大幅增加（103 × 104倍）。
In order to study the effect of high pressure on the electrical conductivity of organic semiconductors, the band structure of the anthracene crystal has been calculated at atmospheric pressure and also at 160 kilobars, using the treatment of the tight-binding approximation. The total band widths of both electrons and holes at 160 kilobars are 5∼6 times as large as those at atmospheric pressure. Although the mobilities of both carriers, on the whole, increase in magnitude by several tens times at 160 kilobars, the sharp drop in the resistivity at high pressure may be due mostly to the great increase in the concentrations of the charge carriers (103∼104 times).