Hot carrier induced degradation of CMOS current mirrors and current sources
Hot carrier induced degradation of CMOS current mirrors and current sources
复制标题
热载流子引起 CMOS 电流镜和电流源的退化
DOI：
10.1109/iedm.1996.554121
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
W. Weber
中科院分区：
文献类型：
--
作者：
R. Thewes;K. Goser;W. Weber
一个模型推导和实验验证，描述了简单的和级联的CMOS电流镜和电流源的单器件参数的基础上的热载流子退化。以这种方式，实现了一种高度实用的方法，该方法允许通过分析手段将整个模拟子电路类的电路和器件参数退化相关联。
A model is derived and verified experimentally that describes the hot-carrier degradation of simple and cascaded CMOS current mirrors and current sources on the basis of single device parameters. In this way, a highly practical method is achieved that allows one to correlate circuit and device parameter degradation of a whole class of analog sub-circuits by analytical means.