Temperature-dependent transport in suspended graphene
Temperature-dependent transport in suspended graphene
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DOI：
10.1103/physrevlett.101.096802
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发表时间：
2008-08-29
影响因子：
8.6
通讯作者：
Kim, P.
中科院分区：
文献类型：
--
作者：
Bolotin, K. I.;Sikes, K. J.;Kim, P.
对于5 < T < 240 K，超净悬浮石墨烯的电阻率是强烈的温度（T）依赖性。在类似于5 K的T下，在类似于2 Am尺寸和类似于170 000 cm（2）/V s的迁移率的设备中，传输接近弹道。在大载流子密度（n > 0.5 × 10 ~（11）cm ~（-2））下，电阻率随温度的增加而增加，在50 K以上电阻率与温度成线性关系，表明载流子是由声子散射的。在T = 240 K时，迁移率接近120000 cm（2）/V s，高于任何已知的半导体。在电荷中性点，我们观察到非普适电导率随T的降低而降低，与密度不均匀性< 108 cm（-2）一致。
The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5 < T < 240 K. At T similar to 5 K transport is near-ballistic in a device of similar to 2 Am dimension and a mobility similar to 170 000 cm(2)/V s. At large carrier density, n > 0.5 X 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T = 240 K the mobility is similar to 120000 cm(2)/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity < 108 cm(-2).