Kinetic phase diagram for island nucleation and growth during homoepitaxy
Kinetic phase diagram for island nucleation and growth during homoepitaxy
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同质外延过程中岛形成核和生长的动力学相图
DOI：
10.1103/physrevb.77.075427
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发表时间：
2008
影响因子：
3.7
通讯作者：
M. Basham
中科院分区：
文献类型：
--
作者：
P. Mulheran;M. Basham
利用平均场速率方程分析了薄膜气相沉积过程中小岛解离和迁移率对岛形核和生长的影响。以Cu（100）同质外延为例，将主要的岛形核和生长机制映射到温度/沉积速率动力学相图上。该方法为图上的边界提供了分析表达式，并鼓励更深入地理解生长机制。结合小岛动力学的动力学蒙特卡罗模拟也被提出并用于测试的动力学相图，并发现令人满意的协议。
The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.