From ultrananocrystalline diamond to single crystal diamond growth in hot filament and microwave plasma-enhanced CVD reactors: A unified model for growth rates and grain sizes
From ultrananocrystalline diamond to single crystal diamond growth in hot filament and microwave plasma-enhanced CVD reactors: A unified model for growth rates and grain sizes
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DOI：
10.1021/jp803735a
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发表时间：
2008-07
影响因子：
3.7
通讯作者：
P. May;Y. Mankelevich
中科院分区：
文献类型：
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作者：
P. May;Y. Mankelevich
现在，CVD金刚石可以以单晶同质外延层的形式沉积，也可以沉积为晶体尺寸为mm、μm或nm的多晶薄膜，并且根据沉积条件，具有高达100 μm h-1的各种生长速率。我们以前开发了一个模型，它提供了一个连贯和统一的图片，占观察到的生长速度，形态和晶体尺寸，所有这些类型的金刚石。该模型是基于H原子，CH 3自由基和其他C1自由基物种与金刚石表面上的悬挂键反应之间的竞争。该方法导致通过单和双自由基二聚体位点的金刚石生长速率G和平均微晶尺寸的公式，其使用作为参数，衬底温度和生长金刚石表面附近的H和CHx（0 ≤ x ≤ 3）的浓度。我们最近添加了一个校正因子的方程，我们现在测试这个新方程的预测金刚石微晶尺寸范围从...
CVD Diamond can now be deposited either in the form of single crystal homoepitaxial layers, or as polycrystalline films with crystal sizes ranging from mm, μm or nm, and with a variety of growth rates up to 100s of μm h−1 depending upon deposition conditions. We previously developed a model which provides a coherent and unified picture that accounts for the observed growth rate, morphology, and crystal sizes, of all of these types of diamond. The model is based on competition between H atoms, CH3 radicals and other C1 radical species reacting with dangling bonds on the diamond surface. The approach leads to formulas for the diamond growth rate G via mono and biradical dimer sites and for the average crystallite size , that use as parameters, the substrate temperature and the concentrations of H and CHx (0 ≤ x ≤ 3) near the growing diamond surface. We recently added a correction factor to the equation for and we now test the predictions of this new equation for diamond crystallite sizes ranging from...