Modeling of silicon heterojunction solar cells
Modeling of silicon heterojunction solar cells
复制标题
硅异质结太阳能电池的建模
DOI：
10.1109/pvsc.2015.7356049
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
S. Goodnick
中科院分区：
文献类型：
--
作者：
Pietro Luppina;P. Lugli;S. Goodnick
在这里，我们使用物理模拟展示了晶体硅 (c-Si)/非晶硅 (a-Si) 异质结太阳能电池的建模结果，其中包括非晶硅势垒中缺陷态的各种模型，以及 ITO 发射极接触的显式模型。我们研究了 a-Si/c-Si 界面的能带偏移和势垒高度的影响，特别是在开路电压方面。研究还表明，太阳能电池的性能敏感地依赖于非晶硅的缺陷态质量及其分布，特别是在发射极侧。最后，我们分析了异质界面上的隧道效应和热电子发射在从 Si 到 ITO 接触层的传输方面的作用。
Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage. It is also shown that the solar cell performance is sensitively dependent on the quality of the a-Si in terms of defect states and their distribution, particularly on the emitter side. Finally, we analyze the role of tunneling and thermionic emission across the heterointerface in terms of transport from the Si to the ITO contact layer.
影响因子：
3
作者：
Masuko, Keiichiro;Shigematsu, Masato;Okamoto, Shingo
通讯作者：
Okamoto, Shingo