Dislocation structures in a {1-104}/<11-20> low-angle tilt grain boundary of alumina (alpha-Al_2O_3)
Dislocation structures in a {1-104}/<11-20> low-angle tilt grain boundary of alumina (alpha-Al_2O_3)
复制标题
氧化铝(α-Al_2O_3){1-104}/<11-20>小角度倾斜晶界中的位错结构
DOI:
10.1007/s10853-011-5430-y
复制
发表时间:
2011
影响因子:
4.5
通讯作者:
Y.Ikuhara
中科院分区:
文献类型:
--
作者:
E.Tochigi;N.Shibata;A.Nakamura;T.Yamamoto;Y.Ikuhara
An alumina (α-Al2O3) bicrystal with a (104)/[110] 2olow-angle tilt grain boundary was fabricated by diffusion bonding at 1500 °C in air, and the grain boundary was observed by transmission electron microscopy (TEM). High-resolution TEM observations revealed that the grain boundary consists of at least two kinds of dislocations. One is a perfect dislocation which has a Burgers vector of 1/3[20]. The other is dissociated into two partial dislocations with a stacking fault on the (0001) plane, and each partial dislocation has a 1/6[101] edge component. It is suggested from structural considerations that the dissociated-dislocation pair originates from ab= 1/3[021] perfect dislocation (i.e., 1/3[021] → 1/6[021] + 1/6[021]). This dissociation produces a stacking fault in the anion sublattice. The stacking fault energy is estimated to be roughly 1.3 Jm−2based on the elastic theory. The authors discuss the dislocation structures and the stacking fault formed on the (0001) plane in detail.