Magnetization reversal and defects in Co/Pt multilayers
Magnetization reversal and defects in Co/Pt multilayers
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DOI：
10.1063/1.352618
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发表时间：
1993-05
影响因子：
3.2
通讯作者：
J. Shen;R. Kirby;K. W. Wierman;Z. Shan;D. Sellmyer;T. Suzuki
中科院分区：
文献类型：
--
作者：
J. Shen;R. Kirby;K. W. Wierman;Z. Shan;D. Sellmyer;T. Suzuki
（Co 3 A/Pt 10 A）×N （N= 8,16和30双层）多层薄膜通过溅射在沉积在硅（111）衬底上的850‐A‐厚的SiN层上制备。我们使用极性克尔效应来测量90-300 K温度范围内磁化反转的时间依赖性。还进行了直接域观测。结果表明，畴的扩展过程与双分子层的数量密切相关。只有在较薄的样品中才发现均匀的畴扩展。从90-300 K温度范围内磁化反转测量的时间依赖性来看，对于N=8的样品，与畴壁运动相关的活化能和体积分别为1.2 eV和2.3×10−18 cm3。N=16和N=30样品的活化能分布似乎很广。我们的观察表明，矫顽力和磁化反转都是由Co和Pt之间的界面缺陷控制的。
(Co 3 A/Pt 10 A)×N (N=8, 16, and 30 bilayers) multilayer thin films were prepared by sputtering onto an 850‐A‐thick SiN layer that had been deposited on a silicon (111) substrate. We used the polar Kerr effect to measure the time dependence of magnetization reversal over the temperature range 90–300 K. Direct domain observations were also carried out. The results show that the domain expansion process depends strongly on the number of bilayers. Uniform domain expansion was found only in the thinner samples. From the time dependence of the magnetization reversal measurements over the temperature range 90–300 K, the activation energy and volume associated with domain wall motion were found to be 1.2 eV and 2.3×10−18 cm3 for N=8 sample. The N=16 and N=30 samples seem to have a broad distribution of activation energies. Our observations suggest that both the coercivity and magnetization reversal are controlled by the defects that come from the interface between the Co and Pt.