QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS
QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS
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DOI：
10.1142/s021820251000474x
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发表时间：
2010-09
影响因子：
3.5
通讯作者：
Q. Ju;Shu Wang
中科院分区：
文献类型：
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作者：
Q. Ju;Shu Wang
本文对多维空间中具有p-n结的半导体双极暂态漂移扩散模型的准中性极限进行了严格的证明。考虑了具有良好边界条件的一般初始数据和光滑的变号掺杂分布。利用多重尺度渐近分析严格地进行了极限分析，其中一个要点是构造一个考虑初始层影响的更精确的近似解。通过精细能量法和相对熵泛函方法得到了关于标度德拜长度的一致估计。
This paper is devoted to the rigorous justification of the quasi-neutral limit of bipolar transient drift-diffusion models for semiconductors with p–n junctions in the multidimensional space. The general initial data and smooth sign-changing doping profiles with good boundary conditions are considered. The limit is performed rigorously by using multiple scaling asymptotic analysis, in which one main point is the construction of a more accurate approximate solution involving the effect of initial layer. The uniform estimates with respect to the scaled Debye length are obtained through the elaborate energy method and the relative entropy functional method.