Electrical Properties of Liquid Ge–Se Alloys
Electrical Properties of Liquid Ge–Se Alloys
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DOI：
10.1143/jpsj.65.230
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发表时间：
1996-01
影响因子：
1.7
通讯作者：
T. Okada;T. Satoh;Masayuki Matsumura;S. Ohno
中科院分区：
文献类型：
--
作者：
T. Okada;T. Satoh;Masayuki Matsumura;S. Ohno
液态Ge 1- c Se c 合金在富Ge 一侧的电导率随着Se 成分的增加而单调降低。 1023 K 时电导率的成分依赖性在成分 c = 0.72 处表现出较宽的最小值。热电势的成分依赖性在成分 c = 0.55 和 0.6 处分别表现出最大值和最小值，并具有正值。向液态GeSe 2 添加Se导致热电势突然增加。 c≤0.3的液态Ge 1-c Se c 合金的电学行为可以从由于化学键的形成而导致的传导电子的减少来理解。通过假设依赖于能量的电导率来分析接近化学计量的GeSe和GeSe 2 的电导率和热电势。 1023K下的电导率间隙变化很大，从液态GeSe的约0eV到液态GeSe 2 的约1.4eV。
The conductivities of liquid Ge 1- c Se c alloys on the Ge-rich side decrease monotonically with increasing Se composition. The composition dependence of conductivity at 1023 K exhibits a broad minimum at the composition c =0.72. The composition dependence of thermopower exhibits a maximum and a minimum with positive values at the compositions c =0.55 and 0.6, respectively. The addition of Se to liquid GeSe 2 gives rise to an abrupt increase in thermopower. The electrical behaviour of liquid Ge 1- c Se c alloys with c ≦0.3 was understood from the decrease in the conduction electrons due to the formation of chemical bonds. The conductivity and thermopower near the stoichiometric GeSe and GeSe 2 were analyzed by assuming an energy-dependent conductivity. The conductivity gap at 1023 K varies widely from about 0 eV for liquid GeSe to about 1.4 eV for liquid GeSe 2 .