Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
Efficient electronic cooling in heavily doped silicon by quasiparticle tunneling
复制标题
通过准粒子隧道效应在重掺杂硅中进行高效电子冷却
DOI：
10.1063/1.1399313
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发表时间：
2001
影响因子：
4
通讯作者：
A. Manninen
中科院分区：
文献类型：
--
作者：
A. Savin;M. Prunnila;P. Kivinen;J. Pekola;J. Ahopelto;A. Manninen
利用超导体-半导体-超导体双肖特基结结构在低温下实现了重掺杂硅中电子的准粒子隧穿冷却。在这项工作中，我们使用铝作为超导体和薄绝缘体上硅（SOI）薄膜作为半导体。电子-声子耦合的SOI薄膜和低的耦合值被证明是观察到的显着的冷却效果的起源。
Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.