Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs
Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs
复制标题
肖特基型 p-GaN 栅极 HEMT 中正向和反向导通阈值电压的去耦
DOI：
10.1109/led.2021.3077081
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发表时间：
2021-07
影响因子：
4.9
通讯作者：
Kevin J. Chen
中科院分区：
文献类型：
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作者：
Junting Chen;Mengyuan Hua;Chengcai Wang;Ling Liu;Lingling Li;Jin Wei;Li Zhang;Zheyang Zheng;Kevin J. Chen
In a ${p}$ -channel field-effect-transistor ( ${p}$ -FET) bridge HEMT device recently realized on a commercial <
