Crystal orientation dependence of spin Hall angle in epitaxial Pt/FeNi systems
Crystal orientation dependence of spin Hall angle in epitaxial Pt/FeNi systems
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DOI：
10.1063/5.0078688
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发表时间：
2022-02-14
影响因子：
4
通讯作者：
Moriyama, Takahiro
中科院分区：
文献类型：
--
作者：
Ikebuchi, Tetsuya;Shiota, Yoichi;Moriyama, Takahiro
利用来自自旋霍尔效应的自旋-轨道扭矩的自旋电子学应用的发展有望推进各种信息设备的低功耗化。然而，自旋霍尔效应对材料的晶体对称性的依赖性还没有被详细研究。在这项工作中，我们研究的自旋霍尔角的依赖关系的Pt/FeNi系统中的外延Pt的晶体取向，通过使用多重铁磁共振技术。我们的自旋霍尔角的估计表明，通过自旋霍尔效应的自旋电流产生的效率可以根据自旋电流流出的方向而变化，而充电电流的方向对该效率的影响较小。
The development of spintronics applications using the spin-orbit torque from the spin Hall effect is expected to advance the low-power consumption of various information devices. However, the dependence of the spin Hall effect on the crystal symmetry of the material has not been studied in detail. In this work, we investigate the dependence of the spin Hall angle on crystal orientation for epitaxial Pt in Pt/FeNi systems by using multiple ferromagnetic resonance techniques. Our estimation of the spin Hall angle indicates that the efficiency of spin current generation via the spin Hall effect can vary depending on the direction in which the spin current flows out, while the direction of the charge current has less impact on this efficiency.