Fingerprints of slingshot non-sequential double ionization on two-electron probability distributions
Fingerprints of slingshot non-sequential double ionization on two-electron probability distributions
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DOI：
10.1038/s41598-019-55066-1
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发表时间：
2019-04
影响因子：
4.6
通讯作者：
G. P. Katsoulis;A. Emmanouilidou
中科院分区：
文献类型：
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作者：
G. P. Katsoulis;A. Emmanouilidou
我们研究了近单周期400 nm低强度激光脉冲驱动下的氦原子双电离。利用三维半经典模型，我们确定了非顺序双电离(NSDI)的主要途径。我们主要集中在延迟路径上，其中一个电子在重新碰撞后以时延的方式电离。我们最近已经证明，控制延迟通路的机制依赖于强度。对于低强度，弹弓-NSDI是主要的机制。在这里，我们确定了两个电子几率分布的差异，在流行的NSDI途径。这使我们能够确定双电子逃逸的性质，从而对弹弓-NSDI有重要的了解。有趣的是，我们发现弹弓-NSDI的一个明显的指点是两个电子以较大且大致相等的能量逃逸。
We study double ionization of He driven by near-single-cycle laser pulses at low intensities at 400 nm. Using a three-dimensional semiclassical model, we identify the pathways that prevail non-sequential double ionization (NSDI). We focus mostly on the delayed pathway, where one electron ionizes with a time-delay after recollision. We have recently shown that the mechanism that prevails the delayed pathway depends on intensity. For low intensities slingshot-NSDI is the dominant mechanism. Here, we identify the differences in two-electron probability distributions of the prevailing NSDI pathways. This allows us to identify properties of the two-electron escape and thus gain significant insight into slingshot-NSDI. Interestingly, we find that an observable fingerpint of slingshot-NSDI is the two electrons escaping with large and roughly equal energies.