Recent Advances and Trends in Advanced Packaging
Recent Advances and Trends in Advanced Packaging
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先进包装的最新进展和趋势
DOI：
10.1109/tcpmt.2022.3144461
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发表时间：
2022-02-01
影响因子：
2.2
通讯作者：
Lau, John H.
中科院分区：
文献类型：
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作者：
Lau, John H.
在这项研究中，先进的包装被定义。先进封装的种类根据其互连密度和电气性能进行排名，并分为2-D，2.1-D，2.3-D，2.5-D和3-D IC集成，这将被介绍和讨论。将讨论小芯片设计和异构集成封装为片上系统（特别是对于高级节点）提供替代方案。不同的基板，如尺寸，引脚数，和金属线宽和间距先进的封装，检查。小芯片之间的横向通信，如嵌入在有机积层封装基板和扇出环氧树脂模塑料，以及灵活的桥梁，硅桥，将被提出。介绍了扇入封装技术，如六面模塑圆片级芯片级封装（WLCSP）及其与普通WLCSP的比较。将提供扇出封装，如芯片先出，芯片面朝上，芯片先出，芯片面朝下，芯片后出以及它们的区别。将介绍先进封装中用于高速和高频应用的低损耗介电材料。首先将简要提及通过大量回流、热压接合和无凸块混合接合的倒装芯片组装。
In this study, advanced packaging is defined. The kinds of advanced packaging are ranked based on their interconnect density and electrical performance, and are grouped into 2-D, 2.1-D, 2.3-D, 2.5-D, and 3-D IC integration, which will be presented and discussed. Chiplet design and heterogeneous integration packaging provide alternatives to the system on chips (especially for advanced nodes) will be discussed. Different substrates, such as size, pin-count, and metal linewidth and spacing for advanced packaging, are examined. The lateral communication between chiplets, such as the silicon bridges embedded in organic build-up package substrate and fan-out epoxy molding compound, as well as flexible bridges, will be presented. Fan-in packaging, such as the six-side molded wafer-level chip-scale package (WLCSP) and its comparison with the ordinary WLCSP, are presented. Fan-out packaging, such as the chip-first with die face-up, chip-first with die face-down, and chip-last and their difference, will be provided. Low-loss dielectric materials for high-speed and high-frequency applications in advanced packaging will be presented. Flip-chip assembly by mass reflow, thermocompression bonding, and bumpless hybrid bonding will be briefly mentioned first.