Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices
Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices
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DOI：
10.1117/12.810032
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发表时间：
2009-01
影响因子：
2.5
通讯作者：
P. Delaunay;B. Nguyen;D. Hoffman;E. Huang;P. Manurkar;Simeon Bogdanov;M. Razeghi
中科院分区：
文献类型：
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作者：
P. Delaunay;B. Nguyen;D. Hoffman;E. Huang;P. Manurkar;Simeon Bogdanov;M. Razeghi
最近推出的 M 结构设计提高了 II 型 InAs-GaSb 光电二极管的暗电流和 R0 A 性能。采用该设计制造的焦平面阵列在 81 K 下进行表征。测得的各个像素的暗电流在 1.1 至 1.6 nA 之间，比以前的超晶格 FPA 低 7 倍。这导致了更高的动态范围和更长的积分时间。没有抗反射涂层的探测器的量子效率为74%。噪声等效温差达到23 mK，仅受测试系统和读出集成电路性能的限制。在 300 K 背景下，在 81 K 下展示了背景受限性能。
The recent introduction of a M-structure design improved both the dark current and R0 A performances of type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels was measured between 1.1 and 1.6 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without antireflective coating was 74%. The noise equivalent temperature difference reached 23 mK, limited only by the performance of the testing system and the read out integrated circuit. Background limited performances were demonstrated at 81 K for a 300 K background.