Effect of acceptor co-doping on magnetism and electronic states in ferromagnetic semiconductor (Zn,Cr)Te
Effect of acceptor co-doping on magnetism and electronic states in ferromagnetic semiconductor (Zn,Cr)Te
复制标题
受主共掺杂对铁磁半导体(Zn,Cr)Te磁性和电子态的影响
DOI：
10.1002/pssc.201300755
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Ofuchi
中科院分区：
文献类型：
--
作者：
K. Zhang;R. Akiyama;K. Kanazawa;S. Kuroda;H. Ofuchi
研究了磁性半导体（Zn,Cr）Te共掺杂氮(N)作为受体杂质的磁性和电子态。采用分子束外延（MBE）法制备了Cr含量为x = 0.06-0.09、N浓度为[N] = 1018-1020 cm - 3的N掺杂Zn1-xCrxTe薄膜，并利用超导量子干涉仪（SQUID）磁强计和x射线吸收精细结构（XAFS）测量了薄膜的磁化强度。结果表明，在几乎相同的氮浓度下，[N] = 1 × 1020cm-3附近的铁磁行为消失，X射线吸收近边结构（XANES）光谱发生变化。讨论了磁性能和Cr电子态的相关变化与N共掺杂导致的三维杂质能级电子密度降低的关系。（©2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The magnetic properties and the electronic states were investigated for a magnetic semiconductor (Zn,Cr)Te co‐doped nitrogen (N) as an acceptor impurity. A series of N‐doped Zn1–xCrxTe thin films with Cr compositions in the range of x = 0.06–0.09 and N concentrations in the range of [N] = 1018–1020 cm–3were grown by molecular beam epitaxy (MBE), and the magnetization measurement using superconducting quantum interference device (SQUID) magnetometer and the X‐ray absorption fine structure (XAFS) measurements were performed. As a result, the disappearance of ferromagnetic behaviors and the change in X‐ray absorption near edge structure (XANES) spectra were observed at almost the same nitrogen concentration around [N] = 1 × 1020cm–3. This correlated change in the magnetic properteis and the Cr electronic states was discussed in relation to a decrease of the electron density in the 3d impurity level due to the N co‐doping. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)