Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy
Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy
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DOI：
10.1002/pssb.201451612
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发表时间：
2015-04-01
影响因子：
1.6
通讯作者：
Bhattacharyya，Satya Ranjan
中科院分区：
文献类型：
--
作者：
Chowdhury，Debasree;Ghose，Debabrata;Bhattacharyya，Satya Ranjan
在升高的靶温度下，30 eV Ar+正入射轰击GaAs（001）表面，证明了由Ehrlich-Schwoebel势垒驱动的涟漪形成。图案遵循被轰击的晶体表面的双重对称性。发现波纹的脊沿沿着排列。离子轰击GaAs（001）表面的涟漪形貌：AFM图像（左图）和XTEM图像（右图）。
Ripple formation driven by Ehrlich–Schwoebel barrier is evidenced for normal incidence 30 eV Ar+bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the twofold symmetry of the bombarded crystal surface. The ridges of the ripples are found to align along the direction. The results are described by a non‐linear continuum equation based on biased diffusion of adspecies created by ion impact.Ripple topography on ion bombarded GaAs (001) surface: AFM image (left panel) and XTEM image (right panel).