Study of the radiation hardness of the pure CsI crystals
Study of the radiation hardness of the pure CsI crystals
复制标题
纯CsI晶体辐射硬度的研究
DOI：
10.1016/j.nima.2008.08.106
复制
发表时间：
2009
影响因子：
1.4
通讯作者：
Y. Usov
中科院分区：
文献类型：
--
作者：
I. Bedny;A. Bondar;V. Cherepkov;D. Epifanov;M. Golkovsky;A. Kuzmin;S. Oreshkin;V. Shebalin;B. Shwartz;Y. Usov
这项研究是由贝儿探测器升级计划发起的，包括用纯CsI替换端盖中的CsI（Tl）晶体。本文用0.6MeVγ-量子束辐照了五个CsI晶体样品。在几次运行中累积的吸收剂量达到55 krad的两个样品和13 krad的其他三个。发现其中四个样品满足超级B工厂条件。在13 krad的吸收剂量下，它们的光输出减少不超过15%。一个样品的抗辐射性较差。
This study was initiated by the Belle detector upgrade plan including the replacement of the CsI(Tl) crystals in the endcaps by the pure CsI. Within this work five samples of pure CsI crystals were irradiated by the beam of 0.6MeVγ-quanta. The absorbed dose accumulated in several runs reached 55krad for two samples and 13krad for three others. Four of these samples were found to satisfy the super B-factory conditions. The light output reduction for them does not exceed 15% at 13krad of absorbed dose. One sample had poor radiation resistance.