Integration and electrical properties of ferroelectric Hf0.5Zr0.5O2 thin film on bulk beta-Ga2O3(-201) substrate for memory applications
Integration and electrical properties of ferroelectric Hf0.5Zr0.5O2 thin film on bulk beta-Ga2O3(-201) substrate for memory applications
复制标题
用于存储器应用的块状 β-Ga2O3(-201) 衬底上铁电 Hf0.5Zr0.5O2 薄膜的集成和电性能
DOI：
10.1109/led.2018.2868240
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发表时间：
2018
影响因子：
4.9
通讯作者：
Yichun Zhou
中科院分区：
文献类型：
--
作者：
Wenwu Xiao;Yue Peng;Shuaizhi Zheng;Qian Feng;Hong Zhou;Chunfu Zhang;Jincheng Zhang;Yue Hao;Min Liao;Yichun Zhou
具有宽带隙半导体的金属-铁电-绝缘体-半导体（MFIS）结构在高温、抗辐射和高密度存储应用中具有广阔的前景，但钙钛矿基铁电薄膜的可扩展性不足和传统宽带隙半导体的高成本是其实际应用的最严重障碍。在这里，我们使用 Al2O3 缓冲层将高度可扩展的铁电 Hf0.5Zr0.5O2(HZO) 薄膜集成在潜在的低成本块状 Ga2O3 基板上，形成 MFIS 结构，并研究 HZO 薄膜和 TaN/HZO/Al2O3/-Ga2O3(−201) MFIS 结构的微观结构和电学性质。我们发现在550℃退火的TaN/HZO/Al2O3/-Ga2O3(−201) MFIS结构表现出记忆效应，这归因于HZO薄膜的铁电性。这封信代表了在基于 HfO2 的铁电存储器中实现-Ga2O3 的关键的第一步。
Metal–ferroelectric–insulator–semiconductor (MFIS) structures with wide bandgap semiconductors are promising for high temperature, radiation-hard, and high-density memory applications, but the insufficient scalability of perovskite-based ferroelectric thin films and the high cost of conventional wide bandgap semiconductors are the most serious barriers for their practical applications. Here, we integrate highly scalable ferroelectric Hf0.5Zr0.5O2(HZO) thin films on potentially low-cost bulk-Ga2O3substrates using an Al2O3buffer layer to form MFIS structures and investigate the microstructural and electrical properties of the HZO thin films and TaN/HZO/Al2O3/-Ga2O3(−201) MFIS structures. We find that the TaN/HZO/Al2O3/-Ga2O3(−201) MFIS structure annealed at 550 °C exhibits a memory effect, which is attributed to the ferroelectricity of the HZO thin film. This letter represents the critical first step in the implementation of-Ga2O3in HfO2-based ferroelectric memories.