Kinase detection with gallium nitride based high electron mobility transistors.
Kinase detection with gallium nitride based high electron mobility transistors.
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DOI：
10.1063/1.4812987
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发表时间：
2013-07
影响因子：
4
通讯作者：
M. S. Makowski;I. Bryan;Z. Sitar;C. Arellano;Jinqiao Xie;R. Collazo;A. Ivanisevic
中科院分区：
文献类型：
--
作者：
M. S. Makowski;I. Bryan;Z. Sitar;C. Arellano;Jinqiao Xie;R. Collazo;A. Ivanisevic
利用AlGaN/GaN高电子迁移率晶体管（HEMT）吸附激酶抑制剂功能化的金纳米粒子，制备了一种无标记的激酶检测系统。HEMT在阈值电压附近工作，因为在该工作区域中灵敏度最高。Au NP/HEMT生物传感器系统在离子溶液中电检测1 pM SRC激酶。这些结果与激酶传感相关的药物开发应用有关。
A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.