Characteristics of Polymer Residues Formed at the Via Hole and Photoresist Ashing Properties of Remote Oxygen/Nitrogen Plasma
Characteristics of Polymer Residues Formed at the Via Hole and Photoresist Ashing Properties of Remote Oxygen/Nitrogen Plasma
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通孔处聚合物残留物的特性及远程氧/氮等离子体的光刻胶灰化性能
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
H. Jeon
中科院分区：
文献类型：
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作者：
Sung Bae Kim;H. Seo;J. Song;Yangdo Kim;H. Soh;Y. C. Kim;H. Jeon
研究了一种低温远程氧/氮等离子体灰化工艺，该工艺可同时去除反应离子刻蚀（RIE）后的光刻胶和含碳、氟聚合物残留物。在RIE工艺之后，氟碳化合物残留物以相对均匀的空间分布在距表面几十埃的深度处。X射线光电子能谱（XPS）分析也表明RIE过程中形成的碳氟化合物膜主要是C-C、C-CFx（x = 1，2，3）、CF和CF2键。灰化速率随着向氧气中添加氮气的量的增加而增加，并且在约10%的氮气添加量下显示饱和。质谱测量显示，随着向氧气中加入氮气，原子氧的量增加。这项研究表明，原子氧是负责在远程氧/氮灰化过程中去除光刻胶的主要反应物种。
The low-temperature remote oxygen/nitrogen plasma ashing process that removes both the photoresist and polymer residues containing carbon and fluorine after reactive ion etching (RIE) process was investigated. The fluorocarbon residue was distributed with a depth of several tens of angstroms from the surface with a relatively homogeneous spatial distribution after the RIE process. X-ray photoelectron spectroscopy (XPS) analysis also showed the formation of fluorocarbon films during RIE with mainly C–C, C–CFx (x=1,2,3), CF, and CF2 bonds. The ashing rate increased with increasing amount of nitrogen addition to oxygen gas and showed saturation at approximately 10% of nitrogen addition. Mass spectrometry measurement revealed that the amount of atomic oxygen increased with the addition of nitrogen to oxygen gas. This study revealed that atomic oxygen is the primary reactive species responsible for removal of photoresist in the remote oxygen/nitrogen ashing process.