Growth of dilute GaNSb by plasma-assisted MBE
Growth of dilute GaNSb by plasma-assisted MBE
复制标题
DOI:
10.1016/j.jcrysgro.2004.12.148
复制
发表时间:
2005-05
影响因子:
1.8
通讯作者:
L. Buckle;B. R. Bennett;Stuart Jollands;T. Veal;N. Wilson;B. Murdin;C. McConville;T. Ashley
中科院分区:
文献类型:
--
作者:
L. Buckle;B. R. Bennett;Stuart Jollands;T. Veal;N. Wilson;B. Murdin;C. McConville;T. Ashley