Epitaxial Growth of BaTiO3 Thin Films and Thier Internal Stresses
Epitaxial Growth of BaTiO3 Thin Films and Thier Internal Stresses
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BaTiO3 薄膜的外延生长及其内应力
DOI：
10.1143/jjap.34.5168
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发表时间：
1995
影响因子：
1.5
通讯作者：
Taichiro Ito Taichiro Ito
中科院分区：
文献类型：
--
作者：
Song–Tae Lee;N. Fujimura;Taichiro Ito Taichiro Ito
研究了衬底预处理和氧分压对在（100）MgO衬底上外延生长BaTiO_3薄膜的影响。当膜厚度为20 nm时，通过HCl蚀刻基板表面，产生膜的表面结晶度和形貌的显著差异。在200 nm厚的膜，另一方面，有没有显着的差异，在蚀刻和收到的基板上的膜之间的结晶度。还观察到随着膜厚度增加的表面结构的差异。20 nm厚的膜的平行于膜厚度的晶格常数小于理论值，并且在200 nm厚的膜中，垂直于和平行于生长方向的晶格常数都大于BaTiO 3块体材料的晶格常数。应力变化可以很好地解释从衬底的外延限制和氧物种在溅射过程中的喷丸效应。
Effects of substrate pre-treatment and O2 partial pressure on the epitaxial growth of sputter-deposited BaTiO3 films on (100)MgO have been studied. When the film thickness is 20 nm, significant differences in the surface crystallinity and morphology of the films are produced by HCl etching of the substrate surface. In 200-nm-thick films, on the other hand, there is no significant difference in the crystallinity between films on etched and as-received substrates. Differences in surface structure with increasing film thickness are also observed. The lattice constant parallel to the film thickness of the 20-nm-thick films is smaller than the theoretical value, and in the 200-nm-thick films, the lattice constants both perpendicular and parallel to the growth direction are larger than those of the BaTiO3 bulk material. The stress change can be well explained in terms of epitaxial restriction from the substrate and peening effect of O species during sputtering.