Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
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DOI：
10.1143/jjap.47.8796
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发表时间：
2008-12
影响因子：
1.5
通讯作者：
A. Limmanee;T. Sugiura;H. Yamamoto;Takehiko Sato;S. Miyajima;A. Yamada;M. Konagai
中科院分区：
文献类型：
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作者：
A. Limmanee;T. Sugiura;H. Yamamoto;Takehiko Sato;S. Miyajima;A. Yamada;M. Konagai
我们研究了掺硼氢化微晶硅氧化物 (p++ µc-SiO:H) 的特性，旨在将该薄膜用作硅太阳能电池的背表面场 (BSF)。我们发现p++ µc-SiO:H薄膜表现出高导电率和优异的钝化效果。使用 p++ µc-SiO:H 薄膜作为 BSF 的铸造多晶硅太阳能电池的效率为 15.5% (2 ×2 cm2)。在大约 1000 nm 波长下的高开路电压和量子效率清楚地表明了 p++ µc-SiO:H 薄膜优异的 BSF 性能。
We have studied the properties of boron-doped hydrogenated microcrystalline silicon oxide (p++ µc-SiO:H) with the aim of applying this film as the back surface field (BSF) in silicon solar cells. We found that the p++ µc-SiO:H film showed high conductivity and excellent passivation effect. A cast polycrystalline silicon solar cell using the p++ µc-SiO:H film as BSF showed an efficiency of 15.5% (2 ×2 cm2). The high open circuit voltage and quantum efficiency at a wavelength of approximately 1000 nm clearly indicated the excellent BSF properties of the p++ µc-SiO:H film.