High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step
High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step
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使用单一蚀刻步骤具有多区域结端接扩展的高压 SiC JBS 二极管
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Bo Zhang
中科院分区：
文献类型：
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作者：
Xiao Chuan Deng;Cheng Yuan Rao;Jin Wei;Hua Ping Jiang;Miao Miao Chen;Xiang Dong Wang;Bo Zhang
针对碳化硅功率结势垒肖特基整流器(JBS)，提出并研究了一种采用单掩模的横向腐蚀结终端扩展(VLE-JTE)新方法。仿真结果表明，采用VLE-JTE端接的JBS击穿电压可达6500V，可达到平面体击穿的95%以上。此外，它实现了窗口面积在远离主结的横向变化的单一掩模，而不是额外的离子注入或刻蚀步骤，以实现多区域JTE，使其更容易在应用中实现。
A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.