A semiconductor exciton memory cell based on a single quantum nanostructure.
A semiconductor exciton memory cell based on a single quantum nanostructure.
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基于单量子纳米结构的半导体激子存储单元。
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
P. Petroff
中科院分区：
文献类型：
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作者：
H. Krenner;C. Pryor;Jun He;P. Petroff
我们展示了激子存储在一个单一的纳米结构，一个自组装的量子后。在产生之后，形成激子的电子和空穴被朝向量子柱的相对端的电场分离，从而抑制它们的辐射复合。在限定的时间之后，通过切换电场将空间间接激子重新转换为光学活性的直接激子。存储激子的发射光被检测到在一个单一的纳米结构的限制和存储时间超过30毫秒被证明。我们确定了一个缓慢的隧道的电子出量子后作为主要的损失机制，通过比较场依赖的时间衰减的存储信号的模型，这个过程和辐射损失。
We demonstrate storage of excitons in a single nanostructure, a self-assembled quantum post. After generation, electrons and holes forming the excitons are separated by an electric field toward opposite ends of the quantum post inhibiting their radiative recombination. After a defined time, the spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the quantum post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.