Generation and Detection of a Pure Spin Current using Co-Based Heusler-Alloy Spin Injector and Detector: Comparison ofCo_2MnSi and Co_2FeSi
Generation and Detection of a Pure Spin Current using Co-Based Heusler-Alloy Spin Injector and Detector: Comparison ofCo_2MnSi and Co_2FeSi
复制标题
使用钴基 Heusler 合金自旋注入器和检测器产生和检测纯自旋电流：Co_2MnSi 和 Co_2FeSi 的比较
DOI：
10.1149/05009.0245ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and K. Hamaya
中科院分区：
文献类型：
--
作者：
S. Oki;M.Kawano;K. Tanikawa;H. Aoki;S. Yamada. M. Miyao;and K. Hamaya
采用超净低压化学气相沉积法在未应变和张应变Si（100）上外延生长了高Ge含量和高C含量的应变Si_（1-xy）GexCy层。通过高分辨X射线光电子能谱（XPS）、X射线衍射和拉曼散射谱对Si_（1-xy）GexCy层进行了分析，发现在283.3 eV附近的XPS C1 s峰是由Si_（1-xy）GexCy层中的C取代引起的。定量地解释了应变层的拉曼位移与垂直晶格常数的关系，证实了应变层生长前衬底表面应变对应变层的生长特性和杂质电活性的影响。通过带状图案化无应变Si盖层/应变Si 1-xy GexCy层/Si（100）异质结构，执行压缩应变和拉伸应变Si层形成。
The epitaxial growth of strained Si1-xy GexCy layer with high Ge fraction and high C fraction on unstrained and tensile-strained Si (100) is performed at 500 or 550oC by ultraclean low-pressure chemical vapor deposition. Evaluating the Si1-xy GexCy layer by high resolution X-ray photoelectron spectroscopy (XPS), X-ray diffraction and Raman scattering spectroscopy, it is proposed that XPS C1s peak at around 283.3 eV is attributed to substititional C in Si1-xy GexCy layer. The relationship between Raman shift and vertical lattice constant for the strained layer is explained quantitatively and it is confirmed that growth characteristics as well as electrical activity of impurity in the strained layer are influenced by the substrate surface strain before the layer growth. By stripeshape patterning unstrained Si cap layer/strained Si1-xy GexCy layer/Si (100) heterostructure, the compressive-and tensile-strained Si layer formation is performed.